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> New (2) toshiba S8836B c-band microwave power gaas fets
New (2) toshiba S8836B c-band microwave power gaas fets
This is a pair of new old-stock Toshiba microwave power GaAs FETs, Toshiba PN S8836B. A datasheet that includes a package outline and S-parameters is available at http://www.microwave.toshiba.co.jp/snis/ovs/des/micro/prod/prodlist/semicon/d-sheet/S8836B.pdf . An application note is available at http:// /taec/components/ApplNote/MicrowaveAN.pdf.
High power: P1dB = 39.5 dBm @ f = 8 GHz
High gain: G1dB= 7.5 dB @ f = 8 GHz
Suitable for C-band amplifier
Output Power at 1dB Compression Point
Power Gain 1t 1dB Compression Point
Gate to Source Breakdown Voltage
SATISFACTION IS GUARANTEED on this item. If it doesn t work for you, let me know in 30 days or so, and I will refund your money.
