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New HGTG40N60B3 70A 600V ufs series n-channel igbt
70A 600V UFS Series N-Channel IGBT
The HGTG40N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25 C and 150 C.
The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.
* 600V Switching SOA Capability
* Typical Fall Time. . . . . . . . . . . . . . . . 100ns at TJ = 150 C