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Tylan/tystar pvd-1000 thin film cvd reactor w/uv
Tylan/Tystar PVD-1000 Thin Film CVD Reactor w/UV !
Tylan PVD-1000 Low Pressure CVD Photo-Enhanced Reactor. (Currently supported by Tystar) The Photo-Enhanced CVD Reactor uses ultraviolet light as an energy source for activating process gases for the deposition of dielectric films at low temperatures (<150 C). Films of silicon oxide (SiO2), silicon nitride(Si3N4), silicon oxy-nitride (SiON) and others can be deposited. Minimal stress is observed in these films due to the low deposition temperature. Since the UV photon energy used does not ionize the process gases, no radiation damage from charged particles has been observed.
The PVD 1000 deposited films offer an impressive step coverage. The PVD 1000 system is available with single-or dual-process chambers. The PVD 1000 reactor is used in a variety of applications for film deposition on "III/V" materials, such as gallium arsenide, indium antimonide and other materials that cannot tolerate higher deposition temperatures.
* Two 316 Stainless Steel Reactor Chambers
* Tymer 16 Programmable Timer/Sequencer
* 3-Mode PID Temperature Controllers
* MFS Electronic Gas Control System
* High Intensity UV Lamp - Low Absorption UV Windows
* Details about System: http:// /additional_2.htm
* Comparable New Cost $250,000
* Original Photochemical Vapor Deposition Reactor Instruction Manual w/Schematics with Unit
