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RF2108 linear power amplilfier rf micro devices qty 5
RF2108 Linear Power Amplilfier RF Micro Devices
DESCRIPTION: The RF2108 is a high power, high efficiency linear amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Biploar Transistor (HBT) process, and has been designed for use as the final RF amplifier in dual-mode 4-cell CDMA/AMPS hand-held digital cellular equipment, spread spectrum systems, and other applications in the 800MHz to 950MHz band. The device is self-contained with 50Ohm input and the output can be easily matched to obtain optimum power, efficiency, and linearity characteristics.
* Single 4.2V to 7.5V Supply
* 28dB Gain With Analog Gain Control
* 800MHz to 950MHz Operation
